Kuzmík, Jan: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Gate Reliability Investigation in Normally-off p-type-GaN cap/AlGaN/GaN HEMTs under Forward Bias Stress

Tapajna, Milan, Hilt, Oliver, Bahat Treidel, Eldad, Wuerfl, Joachim, Kuzmik, Jan

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 411 KB

english, 2016

2

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Hasenöhrl, Stanislav, Chauhan, Prerna, Dobročka, Edmund, Stoklas, Roman, Vančo, Ľubomír, Veselý, Marián, Bouazzaoui, Farah, Chauvat, Marie-Pierre, Ruterana, Pierre, Kuzmík, Ján

Journal:

Applied Physics Express

Year:

2019

Language:

english

File:

PDF, 521 KB

english, 2019

3

Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing

Karol Čičo, Dagmar Gregušová, Štefan Gaži, Ján Šoltýs, Ján Kuzmík, Jean-François Carlin, Nicolas Grandjean, Dionýz Pogany, Karol Fröhlich

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 193 KB

english, 2010

4

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Tapajna, Milan, Killat, Nicole, Palankovski, Vassil, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Kuball, Martin, Kuzmik, Jan

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.66 MB

english, 2014

5

Study of Si implantation into Mg-doped GaN for MOSFETs

Clemens Ostermaier, Sang-Il Ahn, Kay Potzger, Manfred Helm, Jan Kuzmik, Dionyz Pogany, Gottfried Strasser, Jong-Ho Lee, Sung-Ho Hahm, Jung-Hee Lee

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 128 KB

english, 2010

6

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Normally-off InAlN/GaN HEMTs with n++ GaN cap layer: A simulation study

Vitanov, Stanislav, Kuzmik, Jan, Palankovski, Vassil

Year:

2011

Language:

english

File:

PDF, 451 KB

english, 2011

7

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.78 MB

english, 2013

8

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Material and device issues of InAlN/GaN heterostructures

Year:

2012

Language:

english

File:

PDF, 209 KB

english, 2012

9

Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Ťapajna, Milan, Kuzmík, Ján

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 636 KB

english, 2013

10

Self-Heating in GaN Transistors Designed for High-Power Operation

Kuzmik, Jan, Tapajna, Milan, Valik, Lukas, Molnar, Marian, Donoval, Daniel, Fleury, Clement, Pogany, Dionyz, Strasser, Gottfried, Hilt, Oliver, Brunner, Frank, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.37 MB

english, 2014

11

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Electrothermal analysis of In0.12Al0.88N/GaN HEMTs

Molnar, Marian, Donnarumma, Gesualdo, Palankovski, Vassil, Kuzmik, Jan, Donoval, Daniel, Kovac, Jaroslav, Selberherr, Siegfried

Year:

2012

Language:

english

File:

PDF, 421 KB

english, 2012

12

Proposal of normally-off InN-channel high-electron mobility transistors

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 461 KB

english, 2014

13

Interface States and Trapping Effects in Al 2 O 3 - and ZrO 2 /InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures

Ťapajna, Milan, Kuzmík, Jan, Čičo, Karol, Pogany, Dionyz, Pozzovivo, Gianmauro, Strasser, Gottfried, Abermann, Stephan, Bertagnolli, Emmerich, Carlin, Jean-François, Grandjean, Nicolas, Fröhlich, Karo

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 219 KB

english, 2009

14

[IEEE 2007 European Microwave Integrated Circuit Conference - Munich, Germany (2007.10.8-2007.10.10)] 2007 European Microwave Integrated Circuit Conference - Current gain collapse in HBTs analysed by transient interferometric mapping method

Bychikhin, Sergey, Dubec, Viktor, Kuzmik, Jan, Wurfl, Joachim, Kurpas, Paul, Teyssier, Jean-Pierre, Pogany, Dionyz

Year:

2007

Language:

english

File:

PDF, 681 KB

english, 2007

15

Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

Kuzmik, Jan, Vitanov, Stanislav, Dua, Christian, Carlin, Jean-Francois, Ostermaier, Clemens, Alexewicz, Alexander, Strasser, Gottfried, Pogany, Dionyz, Gornik, Erich, Grandjean, Nicolas, Delage, Sylva

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 744 KB

english, 2012

16

N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 263 KB

english, 2012

17

Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

Kuzmik, Jan, Bychikhin, Sergey, Pichonat, Emmanuelle, Gaquière, Christophe, Morvan, Erwan, Kohn, Erhard, Teyssier, Jean-Pierre, Pogany, Dionyz

Journal:

International Journal of Microwave and Wireless Technologies

Year:

2009

Language:

english

File:

PDF, 541 KB

english, 2009

18

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Atomic Layer Deposition of High-k Oxides on InAlN/GaN-based Materials

Abermann, Stephan, Ostermaier, Clemens, Pozzovivo, Gianmauro, Kuzmik, Jan, Bethge, Ole, Henkel, Christoph, Strasser, Gottfried, Pogany, Dionyz, Giesen, Christoph, Heuken, Michael, Alomari, Mohammed, K

Year:

2009

Language:

english

File:

PDF, 357 KB

english, 2009

19

Low-temperature atomic layer deposition-grown Al 2 O 3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Ťapajna, Milan, Válik, Lukáš, Gucmann, Filip, Gregušová, Dagmar, Fröhlich, Karol, Haščík, Štefan, Dobročka, Edmund, Tóth, Lajos, Pécz, Béla, Kuzmík, Ján

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2017

Language:

english

File:

PDF, 1.26 MB

english, 2017

20

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO2 gate oxide prepared by ALD

Stoklas, Roman, Gregusova, Dagmar, Frohlich, Karol, Kuzmik, Jan

Year:

2016

File:

PDF, 319 KB

2016

21

Polarization-Engineered n + GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs

Gregušová, Dagmar, Blaho, Michal, Haščík, Štefan, Šichman, Peter, Laurenčíková, Agáta, Seifertová, Alena, Dérer, Ján, Brunner, Frank, Würfl, Joachim, Kuzmík, Ján

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 695 KB

english, 2017

22

[IEEE 2017 International Conference on Applied Electronics (AE) - Pilsen, Czech Republic (2017.9.5-2017.9.6)] 2017 International Conference on Applied Electronics (AE) - Performance analysis of monolithically integrated depletion-/enhancement-mode InAlN/GaN heterostructure HEMT transistors

Nagy, Lukas, Chvala, Ales, Stopjakova, Viera, Blaho, Michal, Kuzmik, Jan, Gregusova, Dagmar, Satka, Alexander

Year:

2017

Language:

english

File:

PDF, 563 KB

english, 2017

23

Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

Chvala, Ales, Nagy, Lukas, Marek, Juraj, Priesol, Juraj, Donoval, Daniel, Blaho, Michal, Gregusova, Dagmar, Kuzmik, Jan, Satka, Alexander

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.19 MB

english, 2018

24

[IEEE 2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS) - Taormina (2018.4.9-2018.4.12)] 2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS) - Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell

Chvala, Ales, Nagy, Lukas, Marek, Juraj, Priesol, Juraj, Donoval, Daniel, Satka, Alexander, Blaho, Michal, Gregusova, Dagmar, Kuzmik, Jan

Year:

2018

Language:

english

File:

PDF, 1.32 MB

english, 2018

25

N layer

Chauhan, Prerna, Hasenöhrl, Stanislav, Dobročka, Edmund, Vančo, Ľubomír, Stoklas, Roman, Kováč, Jaroslav, Šiffalovič, Peter, Kuzmík, Ján

Journal:

Applied Surface Science

Year:

2018

Language:

english

File:

PDF, 1.27 MB

english, 2018

26

Creation of Two-Dimensional Electron Gas and Role of Surface Donors in III-N Metal-Oxide-Semiconductor High-Electron Mobility Transistors

Gucmann, Filip, Ťapajna, Milan, Pohorelec, Ondrej, Haščík, Štefan, Hušeková, Kristína, Kuzmík, Ján

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 942 KB

english, 2018

27

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs

Chvála, Aleš, Nagy, Lukáš, Marek, Juraj, Priesol, Juraj, Donoval, Daniel, Šatka, Alexander, Blaho, Michal, Gregušová, Dagmar, Kuzmík, Ján

Journal:

Journal of Circuits System and Computers

Year:

2019

Language:

english

File:

PDF, 1.17 MB

english, 2019

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски